Thomas Mikolajick
mikolaji.bsky.social
Thomas Mikolajick
@mikolaji.bsky.social
Scientist
Short-term charge trapping effects in ferroelectric FETs: impact of pulse amplitude and timing

www.sciencedirect.com/science/arti...
January 12, 2026 at 8:51 AM
Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2-Based Memristors

advanced.onlinelibrary.wiley.com/doi/10.1002/...
January 6, 2026 at 8:44 AM
Design and Evaluation of an RFET Standard Cell Library Compatible with 22 nm FDSOI

ieeexplore.ieee.org/document/113...
January 1, 2026 at 4:27 PM
Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing

advanced.onlinelibrary.wiley.com/doi/10.1002/...
December 25, 2025 at 2:29 PM
N-Type Behavior from a P-Type Dopant: Charge Compensation Mechanisms in Trivalent Y-Doped HfO2

advanced.onlinelibrary.wiley.com/doi/10.1002/...
December 8, 2025 at 8:39 AM
The Hodgkin-Huxley Neuristor

ieeexplore.ieee.org/document/112...
November 15, 2025 at 5:29 PM
On the Unusual HCI Degradation of Nanoscale Back-Bias RFETs in 22nm FDSOI Technology

ieeexplore.ieee.org/document/112...
November 6, 2025 at 9:46 AM
Non-Volatile Inverter With 3D Cylindrical Metal-Ferroelectric-Metal Capacitor Realizing Digitized Voltage Output for Computing-In-Memory

ieeexplore.ieee.org/document/112...
November 6, 2025 at 9:39 AM
Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric HfxZr1 – xO2 through Hf Content Modulation

pubs.acs.org/doi/10.1021/...
October 29, 2025 at 3:38 PM
TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs

ieeexplore.ieee.org/document/111...
October 29, 2025 at 1:18 PM
Dynamic Compensation of Threshold-Voltage Shift in SiGe SB-FET for Operation in Ultra-wide Temperature Range

ieeexplore.ieee.org/document/112...
October 29, 2025 at 1:09 PM
Modulation Acceptor-Doping as an Alternative to Classical P-Type Impurity Doping for Silicon

ieeexplore.ieee.org/document/111...
September 30, 2025 at 8:33 AM
Emerging applications: Neuromorphic computing and reservoir computing

link.springer.com/article/10.1...
September 26, 2025 at 7:49 AM
Process Integration of U-Shape Ambipolar Schottky–Barrier Field-Effect Transistors

advanced.onlinelibrary.wiley.com/toc/2199160x...
September 26, 2025 at 7:40 AM
Reposted by Thomas Mikolajick
Imagine a hearing aid powered by AI that translates languages in real-time, no internet needed. Researchers are using 3D neural networks to make it possible. Discover more: www.scientia.global/putting-ai-i... #AI #HearingTech @jtrommer.bsky.social @namlab.bsky.social
Putting AI in your Ears with 3D Neural Networks • scientia.global
It’s difficult to communicate with someone when neither of you speak the same language; apps and online tools like Google Translate can help to bridge the gap, but they hardly make for a natural conve...
www.scientia.global
September 4, 2025 at 11:56 AM
Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects

pubs.acs.org/doi/10.1021/...
August 27, 2025 at 6:00 PM
Bi-Linearity of Back Gated Schottky Barrier Transistors on an Industrial 22nm FDSOI Platform for Efficient In-Hardware Matrix-Vector Multiplication and Addition

ieeexplore.ieee.org/document/111...
August 15, 2025 at 9:58 AM
A Vertical Memristive MoS2-Exfoliated Device for Applications in Artificial Synapses

ieeexplore.ieee.org/document/110...
July 23, 2025 at 10:43 AM
Ndr Effects in a Locally-Active Memristor Induce Small-Signal Amplification in a Simple Cell

ieeexplore.ieee.org/document/110...
July 23, 2025 at 9:57 AM
Model-Based Write Algorithm for Memristive Crossbar Arrays

ieeexplore.ieee.org/document/110...
July 23, 2025 at 7:53 AM
Verilog-A Look-Up Table Model of a TIG-RFET Compatible with 22 nm FDSOI Design Rules Satisfying Gummel Symmetry
ieeexplore.ieee.org/document/110...
July 23, 2025 at 6:30 AM
Nucleation-Limited-Switching Based Compact Models for Hf-Based Ferroelectric Devices and Their Applications in Memory Arrays

ieeexplore.ieee.org/document/110...
July 23, 2025 at 6:24 AM
Synthetic Antiferromagnet Reversal—Role of Thermal and Magnetic Stress and Impact on Functionality of STT-MRAM

ieeexplore.ieee.org/document/110...
July 16, 2025 at 6:04 PM