Alt: a man wearing glasses and a suit has the words she blinded me with science below him

Bifacial perovskite photodetectors maintain high efficiency and stability after 231 MeV xenon ion irradiation. Key photodetector parameters remain nearly unchanged at low fluence (10 10 nucleons cm −2 ) and show only moderate degradation at high fluence (10 11 nucleons cm −2 ), highlighting their strong radiation tolerance and suitability for optoelectronic applications in extreme radiation environments. Abstract In this work, high-performance bifacial perovskite photodetectors (BPPDs) are systematically investigated before and after xenon ion irradiation with energy 1.75 MeV nucleon −1 (231 MeV) and fluences up to 10 11 nucleons cm −2 , simulating extreme radiation environments. A comprehensive characterization of the materials used in the device's functional layers is conducted, accompanied by an in-depth analysis of device performance before and after irradiation. Before irradiation, the devices exhibited good performance, with responsivity ( R ) of 0.39 A W −1 (front side) and 0.33 A W −1 (back side), detectivity ( D* ) of 2.4 × 10 11 and 2.0 × 10 11 Jones. At low fluence (10 10 nucleons cm −2 ): R slightly decreased to 0.37/0.31 A W −1 , while D* increased to 4.4 × 10 11 /3.7 × 10 11 Jones due to an increase in shunt resistance. At higher fluence (10 11 nucleons cm −2 ), irradiation induced high defect formation within the functional layers, causing pronounced degradation: R dropped to 0.25/0.18 A W −1 , D* dropped to 2.8 × 10 11 /2.2 × 10 11 Jones. Despite these changes, the devices retained over 60% of their initial performance and maintained low spectral noise density, confirming notable radiation tolerance. The synergy of bifaciality and radiation resistance highlights the potential of BPPDs for reliable operation under harsh radiation conditions, offering a promising solution for future optoelectronic applications in radiation-exposed environments.

またね！／feat.三毛音猫、流音ヨゾラ [音楽・サウンド] またいつかこの場所で出会えたなら…

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